ZnO nanowires is available for two spec: one is D <100nm,L >5um, widely used in antibacterial application and sensor field.min order is 1g, worldwide shipping.

Zinc Oxide nanowires/ZnO NWs, as an ideal material for the preparation of a Schottky contact type devices. Hongwu nanometer is professional manufacturer, supplier and exporter in china for nano materials in china. Our ZNO zinc oxide nanowires specification as follows: 1. D<100nm,L>5um,99.9%                2. D:100-200nm,L>1um,99.9%                          As nucleic acid detection is more and more widely applied to genotyping technology, clinical diagnostics and biomedical research and other fields, the traditional optical detection and real-time PCR technology have some disadvantages, such as high cost, no longer can meet the demand that the devices require the testing with high cost-effective, high speed and high sensitivity. By contrast, the one-dimensional material represented by the unmarked detection device, because of a high specific surface area, can offer the possibility for low-cost, simple and effective DNA testing. FET based on semiconductor nanowires is such a great potential device. Wherein, changing the metal - semiconductor interface of Schottky barrier height(SBH)can modulate device performance, which is a hotspot for researchers.        Zinc Oxide nanowires/ZnO NWs with excellent semiconductor and piezoelectric performance, is an ideal material for the preparation of a Schottky contact type devices. Researchers of the National Center for Nanoscience and other institutions made use of exerting external strains on Zinc Oxide nanowires to produce piezoelectric potential. Then on the basis of piezoelectric effect, the potential can be increased or decreased the effect of SBH link interface the carrier transportation, so that change the properties of nanowire-based devices. In addition, making specific hybridization between probe complementary target cDNA and nanowire adsorbed single-stranded DNA (the ssDNA), the device can achieve selective detection function.       The experimental results of this work showed that, when the compressive strain applied to the Zinc Oxide nanowire-based DNA sensor became -0.59%, the relative value of the current response increased by 454%. This fully illustrated that the modified method using a piezoelectric device electronics effect can significantly improve the detection performance of the Schottky contact type ZnO nanowire based DNA sensor.