By changing the quantity of silicon rich, annealing conditions, size and density control oxidation of silicon in silicon Silicon Carbide Nanopowders. Literature that the critical temperature of silicon nanocrystals is 1000oC, and we tested to determine the critical annealing temperature for 900oC nanocrystals. On the right is via the 900oC annealing silicon rich silicon was about high resolution electron microscopy images of 30% silicon rich silicon oxide. Can clear the silicon nanocrystals. On the left corner of the electron diffraction pattern it is.
First observed by Au/ (Ge/SiO2) /p-Si superlattice structure electroluminescence. Right out of high resolution electron microscopy figure four cycle Ge/SiO2 superlattices. The bright line for the SiO2, 2.0nm thickness, Ge thickness of 2.4nm.
The growth of nano SiO2/Si/SiO2 double barrier by magnetron sputtering technique on silicon substrate (NDB) single well potential sandwich structure, the first realization of visible photoluminescence of Au/NDB/p-Si structure. Discovery of electroluminescence peak position, intensity with the nanometer silicon layer thickness (W) changes as synchronous oscillations, as shown on the right. Further tests and analyses show that the oscillation period is equal to the deBroglie wavelength of 1/2 carrier. Lighting model is explained by our group proposed electroluminescence.
For the first time based on SiO2:Si:Er film growth by magnetron sputtering has been achieved on the 1.54 m wavelength as (optical communication window) Er electroluminescence.